Changchun Institute of Optics,Fine Mechanics and Physics,CAS
PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X | |
Wang J. F.; Xu X. R. | |
1991 | |
发表期刊 | Journal of Luminescence |
ISSN | 0022-2313 |
页码 | 685-688 |
摘要 | Heteroepitaxial layers of ZnS(x)Se1-x with gradually changed x are grown on GaAs substrates by means of VPE. ZnS and ZnSe powders are vaporized and the vapor is carried by a flow of H2 gas. Their photovoltaic characteristics are studied. An open circuit voltage of 0.76 V and a short circuit current of 32.9 mA cm-2 are obtained. The highest efficiency for the solar cells of ZnS(x)Se1-x/GaAs without antireflection coatings is 11%, 2% higher than that of ZnSe/GaAs cells fabricated in our laboratory. This value is found to be strongly dependent on the annealing temperature of ZnS(x)Se1-x thin film. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/34319 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang J. F.,Xu X. R.. PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X[J]. Journal of Luminescence,1991:685-688. |
APA | Wang J. F.,&Xu X. R..(1991).PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X.Journal of Luminescence,685-688. |
MLA | Wang J. F.,et al."PHOTOVOLTAIC CHARACTERISTICS OF A ZNSXSE1-X GAAS HETEROJUNCTION WITH GRADUALLY CHANGED-X".Journal of Luminescence (1991):685-688. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
bj01280111.pdf(928KB) | 开放获取 | -- | 浏览 下载 |
个性服务 |
推荐该条目 |
保存到收藏夹 |
查看访问统计 |
导出为Endnote文件 |
谷歌学术 |
谷歌学术中相似的文章 |
[Wang J. F.]的文章 |
[Xu X. R.]的文章 |
百度学术 |
百度学术中相似的文章 |
[Wang J. F.]的文章 |
[Xu X. R.]的文章 |
必应学术 |
必应学术中相似的文章 |
[Wang J. F.]的文章 |
[Xu X. R.]的文章 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论