TRANSIENT STATE STUDY OF THE POLARIZATION PROPERTIES OF SIDEBAND RECOMBINATION EMISSIONS IN GAN CRYSTALS

	TRANSIENT STATE STUDY OF THE POLARIZATION PROPERTIES OF SIDEBAND RECOMBINATION EMISSIONS IN GAN CRYSTALS
	Bao Q. C.; Zhang F. L.; Pang S. M.; Li D. L.; Tian N. L.; Xu X. R.
	1988
发表期刊	Journal of Luminescence
ISSN	0022-2313
页码	491-492
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34304
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Bao Q. C.,Zhang F. L.,Pang S. M.,et al. TRANSIENT STATE STUDY OF THE POLARIZATION PROPERTIES OF SIDEBAND RECOMBINATION EMISSIONS IN GAN CRYSTALS[J]. Journal of Luminescence,1988:491-492.
APA	Bao Q. C.,Zhang F. L.,Pang S. M.,Li D. L.,Tian N. L.,&Xu X. R..(1988).TRANSIENT STATE STUDY OF THE POLARIZATION PROPERTIES OF SIDEBAND RECOMBINATION EMISSIONS IN GAN CRYSTALS.Journal of Luminescence,491-492.
MLA	Bao Q. C.,et al."TRANSIENT STATE STUDY OF THE POLARIZATION PROPERTIES OF SIDEBAND RECOMBINATION EMISSIONS IN GAN CRYSTALS".Journal of Luminescence (1988):491-492.