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Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition
Miao G. Q.; Zhang D. W.
2012
发表期刊Nanoscale Research Letters
ISSN1931-7573
卷号7
摘要Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction showed that the nanowires grown at different stages were single crystalline with < 111 > growth direction. The photoluminescence studies carried out at room temperature on InP nanowires reveal that the blueshift of photoluminescence decreased as the growing time accumulates, which is related to the increase in the diameter, rather than the length. Raman spectra for nanowires at different growing stages show that the quality of the nanowire changes. The growth of InP nanowires at different growing stages is demonstrated as a dynamic process.
收录类别SCI ; EI
语种英语
WOS记录号BMC:10.1186/1556-276X-7-321
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/34134
专题中科院长春光机所知识产出
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Miao G. Q.,Zhang D. W.. Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition[J]. Nanoscale Research Letters,2012,7.
APA Miao G. Q.,&Zhang D. W..(2012).Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition.Nanoscale Research Letters,7.
MLA Miao G. Q.,et al."Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition".Nanoscale Research Letters 7(2012).
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