OPTICALLY PUMPED LASING IN ZNSE EPILAYERS GROWN BY OMVPE

	OPTICALLY PUMPED LASING IN ZNSE EPILAYERS GROWN BY OMVPE
	Yang B. J.; Tian H.; Fan X. W.
	1991
发表期刊	Journal of Luminescence
ISSN	0022-2313
页码	884-888
摘要	Blue lasing emission in ZnSe thin films under optically pumped excitation has been observed. The films were grown on (1 0 0) GaAs substrates by organometallic vapor phase epitaxy (OMVPE). These epitaxial films have been characterized using low temperature photoluminescence (PL) and electrical transport as well as deep level transient spectroscopy (DLTS) measurements. It has been found that deep level PL bands are strongly dependent on the growth temperature, and the near band edge (NBE) emission predominated the entire PL spectrum only at the growth temperature near 285-degrees-C. The lasing emission spectrum from the ZnSe cavity has been measured at 77 K under various excitation levels by the 337.1 nm line of a N2 laser. Only one emission band E(s) at 445 nm appears under low excitation level. With increasing excitation level a new band P follows at 448.5 nm below the E(s) band, which is ascribed to the interaction of excitons. The lasing emission from OMVPE films which originates from the P band with 0.75 MW/cm2 threshold power has been reported for the first time and it can be operated up to 150 K.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34131
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yang B. J.,Tian H.,Fan X. W.. OPTICALLY PUMPED LASING IN ZNSE EPILAYERS GROWN BY OMVPE[J]. Journal of Luminescence,1991:884-888.
APA	Yang B. J.,Tian H.,&Fan X. W..(1991).OPTICALLY PUMPED LASING IN ZNSE EPILAYERS GROWN BY OMVPE.Journal of Luminescence,884-888.
MLA	Yang B. J.,et al."OPTICALLY PUMPED LASING IN ZNSE EPILAYERS GROWN BY OMVPE".Journal of Luminescence (1991):884-888.

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