Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions

	Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions
	Hu W. G.; Ma B.; Li D. B.; Miyagawa R.; Miyake H.; Hiramatsu K.
	2010
发表期刊	Japanese Journal of Applied Physics
ISSN	0021-4922
卷号	49 期号:3
摘要	Al(0.25)Ga(0.75)N/AlN/GaN heterojunctions with AlN interlayers of various thicknesses were grown on c-plane sapphire by metalorganic vapor phase epitaxy (MOVPE). We have revealed that the AlN interlayer hardly affects morphologies and crystal qualities; however, it prominently enhances the two-dimensional electron gas (2DEG) mobility. The optimum thickness of the AlN interlayer is 1 nm, and the corresponding room temperature Hall mobility and the sheet carrier density are 1700 cm(2) V(-1) s(-1) and 1.27 x 10(13) cm(-2), respectively. Self-consistent calculation results indicates that with increasing AlN thickness, i) the conduction-band discontinuity between AlGaN and GaN linearly increases; ii) the percentage of the total carriers in the AlGaN layer exponentially decreases, and content in the AlN layer exponentially increases. (C) 2010 The Japan Society of Applied Physics
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34118
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hu W. G.,Ma B.,Li D. B.,et al. Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions[J]. Japanese Journal of Applied Physics,2010,49(3).
APA	Hu W. G.,Ma B.,Li D. B.,Miyagawa R.,Miyake H.,&Hiramatsu K..(2010).Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions.Japanese Journal of Applied Physics,49(3).
MLA	Hu W. G.,et al."Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions".Japanese Journal of Applied Physics 49.3(2010).

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