Synthesis and photoluminescence of the branching silicon carbide nanowires

	Synthesis and photoluminescence of the branching silicon carbide nanowires
	Cao L. Z.; Liu X.; Zhao J. Q.; Lu H. X.
	2012
发表期刊	Physica E-Low-Dimensional Systems & Nanostructures
ISSN	1386-9477
卷号	46 页码:57-60
摘要	A simple and effective method is developed to controllably synthesize branching silicon carbide (SiC) nanowires by using gas flow fluctuation. The experimental results indicated that uniformly 'Y' shaped branching SiC nanowires were successfully synthesized. A branching mechanism of fluctuation-promoted split of catalyst particles is proposed. The synthetic approach presented here will open a new route to fabricate other nanomaterials branching structure. Photoluminescence (PL) spectrum and mapping result show that the nanowires can emit green band centered at 2.32 eV (535 nm) at room temperature, indicating potential applications in integrated nano-optoelectronic devices. (c) 2012 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34108
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Cao L. Z.,Liu X.,Zhao J. Q.,et al. Synthesis and photoluminescence of the branching silicon carbide nanowires[J]. Physica E-Low-Dimensional Systems & Nanostructures,2012,46:57-60.
APA	Cao L. Z.,Liu X.,Zhao J. Q.,&Lu H. X..(2012).Synthesis and photoluminescence of the branching silicon carbide nanowires.Physica E-Low-Dimensional Systems & Nanostructures,46,57-60.
MLA	Cao L. Z.,et al."Synthesis and photoluminescence of the branching silicon carbide nanowires".Physica E-Low-Dimensional Systems & Nanostructures 46(2012):57-60.