An improved method and experimental results of noise used as reliability estimation for semiconductor lasers

	An improved method and experimental results of noise used as reliability estimation for semiconductor lasers
其他题名	论文其他题名
	Hu G. J.; Shi J. W.; Shi Y. X.; Yang X. S.; Li J.
	2003
发表期刊	Optics and Laser Technology
ISSN	0030-3992
卷号	35 期号:6 页码:481-483
摘要	The low-frequency noise is a sensitive non-destructive indicator of semiconductor devices reliability. In this paper, the noises in InGaAsP/InGaAs/GaAlAs double quantum well semiconductor laser diodes (LDs) are measured, and the correlation between the noise and device reliability is studied. The insults indicate that the noise level in the LDs operating in low bias current is very important for estimating device reliability. So when noise is used as reliability indicator, the noise levels in LDs operating in both low and higher bias current should be considered, which improves the validity of reliability estimation. (C) 2003 Elsevier Science Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26832
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hu G. J.,Shi J. W.,Shi Y. X.,et al. An improved method and experimental results of noise used as reliability estimation for semiconductor lasers[J]. Optics and Laser Technology,2003,35(6):481-483.
APA	Hu G. J.,Shi J. W.,Shi Y. X.,Yang X. S.,&Li J..(2003).An improved method and experimental results of noise used as reliability estimation for semiconductor lasers.Optics and Laser Technology,35(6),481-483.
MLA	Hu G. J.,et al."An improved method and experimental results of noise used as reliability estimation for semiconductor lasers".Optics and Laser Technology 35.6(2003):481-483.

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