Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Visible photo luminescence of Si clusters embedded in silicon nitride films by plasma-enhanced chemical vapor deposition | |
其他题名 | 论文其他题名 |
Wang Y.; Shen D. Z.; Liu Y. C.; Zhang J. Y.; Zhang Z. Z.; Liu Y. L.; Lu Y. M.; Fan X. M. | |
2005 | |
发表期刊 | Physica E-Low-Dimensional Systems & Nanostructures
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ISSN | 1386-9477 |
卷号 | 27期号:1—2页码:284-289 |
摘要 | Strong visible photoluminescence (PL) has been observed in the hydrogenated amorphous silicon nitride (a-SiNx:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD). With various temperatures annealing, the evolution of the structure and of the PL properties has been studied to explain the PL origin. With the disappearance of PL peak with respect to equivalent to Si-0 (dangling bonds) at the higher annealing temperature, the intense PL peak shows an obvious blueshift. Accompanying with the blueshift, a new PL peak on the high-energy side, about 640 nm, has been observed in the spectra, and the appearance of the new PL peak has been discussed. In terms of the present results, the intense PL originates from the Si clusters embedded in the silicon nitride. (c) 2005 Elsevier B.V. All rights reserved. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26778 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang Y.,Shen D. Z.,Liu Y. C.,et al. Visible photo luminescence of Si clusters embedded in silicon nitride films by plasma-enhanced chemical vapor deposition[J]. Physica E-Low-Dimensional Systems & Nanostructures,2005,27(1—2):284-289. |
APA | Wang Y..,Shen D. Z..,Liu Y. C..,Zhang J. Y..,Zhang Z. Z..,...&Fan X. M..(2005).Visible photo luminescence of Si clusters embedded in silicon nitride films by plasma-enhanced chemical vapor deposition.Physica E-Low-Dimensional Systems & Nanostructures,27(1—2),284-289. |
MLA | Wang Y.,et al."Visible photo luminescence of Si clusters embedded in silicon nitride films by plasma-enhanced chemical vapor deposition".Physica E-Low-Dimensional Systems & Nanostructures 27.1—2(2005):284-289. |
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