Ultraviolet photoluminescence from 3C-SiC nanorods

	Ultraviolet photoluminescence from 3C-SiC nanorods
其他题名	论文其他题名
	Zhang L. G.; Yang W. Y.; Jin H.; Zheng Z. H.; Xie Z. P.; Miao H. Z.; An L. N.
	2006
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	89 期号:14
摘要	An intensive sharp photoluminescence at 3.3 eV is observed from single-crystal 3C-SiC nanorods. Structural characterization reveals that the nanorods contain a fairly large amount of threefold stacking faults. We tentatively attribute the emission to these stalking faults, which structurally resemble 6H-SiC nano-layers of 1.5 nm embedded in a 3C-SiC matrix. The emission mechanism is discussed in terms of spontaneous polarization at the stacking faults. (c) 2006 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26742
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang L. G.,Yang W. Y.,Jin H.,et al. Ultraviolet photoluminescence from 3C-SiC nanorods[J]. Applied Physics Letters,2006,89(14).
APA	Zhang L. G..,Yang W. Y..,Jin H..,Zheng Z. H..,Xie Z. P..,...&An L. N..(2006).Ultraviolet photoluminescence from 3C-SiC nanorods.Applied Physics Letters,89(14).
MLA	Zhang L. G.,et al."Ultraviolet photoluminescence from 3C-SiC nanorods".Applied Physics Letters 89.14(2006).