P-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering

	P-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering
其他题名	论文其他题名
	Yao B.; Guan L. X.; Xing G. Z.; Zhang Z. Z.; Li B. H.; Wei Z. P.; Wang X. H.; Cong C. X.; Xie Y. P.; Lu Y. M.; Shen D. Z.
	2007
发表期刊	Journal of Luminescence
ISSN	0022-2313
卷号	122 页码:191-194
摘要	Nitrogen (N)-doped zinc oxide (ZnO:N) films were deposited on quartz glass substrates at 510K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The as-grown ZnO:N shows insulating at roorn temperature, but behaves p-type conduction with resistivity of 456 Omega cm, carrier concentration of 1.2 x 10(17) cm(-3) and Hall mobility of 0.1 cm(2)/V S in the dark after annealed at 860 K for I h under 10(-4) Pa. Unfortunately, the p-type conduction is not stable in the dark and transforms into n-type gradually. After irradiated by sunlight for a few of minutes, the n-type ZnO:N reverts to metastable p-type one in the dark and remains p-type conductivity in the brightness. Formation and stability of the p-type ZnO:N are discussed in the present paper. (c) 2006 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26593
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yao B.,Guan L. X.,Xing G. Z.,et al. P-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering[J]. Journal of Luminescence,2007,122:191-194.
APA	Yao B..,Guan L. X..,Xing G. Z..,Zhang Z. Z..,Li B. H..,...&Shen D. Z..(2007).P-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering.Journal of Luminescence,122,191-194.
MLA	Yao B.,et al."P-type conductivity and stability of nitrogen-doped zinc oxide prepared by magnetron sputtering".Journal of Luminescence 122(2007):191-194.

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