Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy

	Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy
其他题名	论文其他题名
	Jiao S.; Lu Y. M.; Zhang Z. Z.; Li B. H.; Yao B.; Zhang J. Y.; Zhao D. X.; Shen D. Z.; Fan X.
	2007
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	102 期号:11
摘要	Nitrogen-doped ZnO thin films with different nitrogen concentrations were fabricated by plasma-assisted molecular beam epitaxy. Hall effect measurements show p-type conduction for samples with low doping concentration. In highly doped ZnO, the p-type conduction converted to high resistance or unstable p-type behavior. This result indicates that highly doped samples are heavily compensated. In the low temperature photoluminescence spectrum, a donor-acceptor pair (DAP) emission band shows a strong redshift and broadening with increasing nitrogen doping concentration. The large shift of the DAP emission is explained by the Coulomb-potential fluctuation model related to compensated semiconductors. (c) 2007 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26592
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiao S.,Lu Y. M.,Zhang Z. Z.,et al. Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy[J]. Journal of Applied Physics,2007,102(11).
APA	Jiao S..,Lu Y. M..,Zhang Z. Z..,Li B. H..,Yao B..,...&Fan X..(2007).Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy.Journal of Applied Physics,102(11).
MLA	Jiao S.,et al."Optical and electrical properties of highly nitrogen-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy".Journal of Applied Physics 102.11(2007).

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