Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy | |
其他题名 | 论文其他题名 |
Zhang Z. Z.; Shen D. Z.; Lu Y. M.; Zhang J. Y.; Li B. H.; Zhao D. X.; Yao B.; Fan X. W. | |
2007 | |
发表期刊 | Journal of Luminescence |
ISSN | 0022-2313 |
卷号 | 122页码:202-204 |
摘要 | Optical properties of ZnO thin films fabricated on GaAs substrate by molecular beam epitaxy method were investigated. The emissions from acceptor-bound exciton and free electron acceptor were enhanced after annealing at 550 degrees C for I h. In the photoluminescence spectra of the annealed sample, donor-acceptor pair emission was confirmed by changing excitation density. Hall measurement indicated that the conductivity of the ZnO thin film converses from n-type to high resistant after thermal diffusion by annealing at 550 degrees C. (c) 2006 Elsevier B.V. All rights reserved. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26587 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang Z. Z.,Shen D. Z.,Lu Y. M.,et al. Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy[J]. Journal of Luminescence,2007,122:202-204. |
APA | Zhang Z. Z..,Shen D. Z..,Lu Y. M..,Zhang J. Y..,Li B. H..,...&Fan X. W..(2007).Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy.Journal of Luminescence,122,202-204. |
MLA | Zhang Z. Z.,et al."Optical properties of ZnO fabricated on GaAs by molecular beam epitaxy".Journal of Luminescence 122(2007):202-204. |
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