Model calculation for enhancement factor of a gated field emission nanotube

	Model calculation for enhancement factor of a gated field emission nanotube
其他题名	论文其他题名
	Lei D.; Zeng L. Y.; Wang W. B.; Liang J. Q.
	2007
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	102 期号:11
摘要	The field enhancement factor of gated nanotube with opened top was analytically calculated by the electrostatic method. The effect of geometrical parameters of the device on their field enhancement factor was investigated, including the gate-hole radius, gate-anode distance, and nanotube radius. The theoretical analysis shows that the enhancement factor increases greatly with the decrease of gate-hole radius. However, if the gate voltage is zero, the factor increases with the increase of gate-hole radius, and finally reaches a constant, which increases with the increase of nanotube length L. The enhancement factor beta gets larger when the nanotube radius gets smaller. As the gate-anode distance d(2) is finite, the beta will decrease with the increase of d(2). If the d(2) is infinite, the effect of gate-anode distance on beta can be ignored. All the results of theoretical calculation can provide useful information in the fabrication and design of the gated nanotube cold cathode for field emission display panels and other nanoscale triode devices. (c) 2007 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26570
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Lei D.,Zeng L. Y.,Wang W. B.,et al. Model calculation for enhancement factor of a gated field emission nanotube[J]. Journal of Applied Physics,2007,102(11).
APA	Lei D.,Zeng L. Y.,Wang W. B.,&Liang J. Q..(2007).Model calculation for enhancement factor of a gated field emission nanotube.Journal of Applied Physics,102(11).
MLA	Lei D.,et al."Model calculation for enhancement factor of a gated field emission nanotube".Journal of Applied Physics 102.11(2007).

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