Realization of p-type conduction in undoped Mg(x)Zn(1-x)O thin films by controlling Mg content

	Realization of p-type conduction in undoped Mg(x)Zn(1-x)O thin films by controlling Mg content
其他题名	论文其他题名
	Li Y. F.; Yao B.; Lu Y. M.; Wei Z. P.; Gai Y. Q.; Zheng C. J.; Zhang Z. Z.; Li B. H.; Shen D. Z.; Fan X. W.; Tang Z. K.
	2007
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	91 期号:23
摘要	Undoped Mg(x)Zn(1-x)O thin films with Mg content of 0 <= x <= 0.20 were grown on c-sapphire substrate by plasma-assisted molecular beam epitaxy. The Mg(x)Zn(1-x)O shows n-type conduction in Mg content of x <= 0.05, and the carrier concentration decreases slowly from 10(18) to 10(17) cm(-3) with increasing Mg content. However, as x >= 0.10, the Mg(x)Zn(1-x)O begins to show p-type conduction, and the carrier concentration goes down sharply to 10(15) cm(-3) firstly and then increases slowly with increasing Mg content from 10(15) to 10(16) cm(-3). The mechanism of transformation from n to p type and change of the carrier concentrations with Mg content were investigated by photoluminescence and absorption measurements as well as first-principle calculation. (c) 2007 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26549
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li Y. F.,Yao B.,Lu Y. M.,et al. Realization of p-type conduction in undoped Mg(x)Zn(1-x)O thin films by controlling Mg content[J]. Applied Physics Letters,2007,91(23).
APA	Li Y. F..,Yao B..,Lu Y. M..,Wei Z. P..,Gai Y. Q..,...&Tang Z. K..(2007).Realization of p-type conduction in undoped Mg(x)Zn(1-x)O thin films by controlling Mg content.Applied Physics Letters,91(23).
MLA	Li Y. F.,et al."Realization of p-type conduction in undoped Mg(x)Zn(1-x)O thin films by controlling Mg content".Applied Physics Letters 91.23(2007).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Li-2007-Realization （569KB）			开放获取	--	浏览下载