Room temperature p-n ZnO blue-violet light-emitting diodes

	Room temperature p-n ZnO blue-violet light-emitting diodes
其他题名	论文其他题名
	Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Fan X. W.; Tang Z. K.
	2007
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	90 期号:4
摘要	ZnO p-n junction light-emitting diodes (LEDs) were fabricated on c-plane Al2O3 substrates by plasma-assisted molecular beam epitaxy. Gas mixture of N-2 and O-2 was used as the p-type dopant, by which the double-donor doping of N-2(O) can be avoided significantly. The fabricated p-type ZnO layers have a higher hole density and carrier mobility. The LEDs showed a very good rectification characteristic with a low threshold voltage of 4.0 V even at a temperature above 300 K. The LEDs can even emit intensive electroluminescence in the blue-violet region at the temperature of 350 K. The blue-violet emission was attributed to the donor-acceptor pair recombination at the p-type layer of the LED. (c) 2007 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26522
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wei Z. P.,Lu Y. M.,Shen D. Z.,et al. Room temperature p-n ZnO blue-violet light-emitting diodes[J]. Applied Physics Letters,2007,90(4).
APA	Wei Z. P..,Lu Y. M..,Shen D. Z..,Zhang Z. Z..,Yao B..,...&Tang Z. K..(2007).Room temperature p-n ZnO blue-violet light-emitting diodes.Applied Physics Letters,90(4).
MLA	Wei Z. P.,et al."Room temperature p-n ZnO blue-violet light-emitting diodes".Applied Physics Letters 90.4(2007).

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