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The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification
其他题名论文其他题名
Fang F.; Zhao D. X.; Li B. H.; Zhang Z. Z.; Zhang J. Y.; Shen D. Z.
2008
发表期刊Applied Physics Letters
ISSN0003-6951
卷号93期号:23
摘要10 nm sized hexagonal CdS nanoparticles were decorated on the surface of well-aligned ZnO nanowall through a facile hydrothermal approach. The effects of CdS-cap layer on the optical and photoelectrical properties of ZnO nanowalls have been studied. It was found the CdS acted not only as a passivation layer to suppress the detrimental surface states of ZnO nanowalls, which reduced the deep-level emissions, but also as an interfacial carrier transport layer to reduce the probability of carrier recombination. Due to this effect a significant enhancement in ultraviolet photoconductivity of ZnO nanowalls was observed by the surface modification with CdS nanoparticles.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26515
专题中科院长春光机所知识产出
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Fang F.,Zhao D. X.,Li B. H.,et al. The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification[J]. Applied Physics Letters,2008,93(23).
APA Fang F.,Zhao D. X.,Li B. H.,Zhang Z. Z.,Zhang J. Y.,&Shen D. Z..(2008).The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification.Applied Physics Letters,93(23).
MLA Fang F.,et al."The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification".Applied Physics Letters 93.23(2008).
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