Optical and electrical properties of vanadium doped Indium oxide thin films

	Optical and electrical properties of vanadium doped Indium oxide thin films
其他题名	论文其他题名
	Li H. B.; Wang N.; Liu X. Y.
	2008
发表期刊	Optics Express
ISSN	1094-4087
卷号	16 期号:1 页码:194-199
摘要	A new transparent conducting indium vanadium oxide (IVO) thin film is developed by using a modification-specific reactive thermal coevaporation method. Electrical and optical characteristics of IVO films were studied with different vanadium doping concentration, which shows good optical transmittance in the visible spectra range and a minimum electrical resistivity of 7.95x10(-4) Omega.cm corresponding to a carrier density of 2.28x10(20) cm(-3) and a Hall mobility of 34.5 cm(2) V-1 s(-1), respectively. Using IVO film as the anode, OLED shows a reduced turn-on voltage and significantly enhanced luminance and electroluminescence efficiency with respect to the device with an ITO anode. Our results indicate that IVO is a promising transparent conducting oxide material, and a suitable electrical contact for hole injection in OLEDs. (c) 2008 Optical Society of America.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26506
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li H. B.,Wang N.,Liu X. Y.. Optical and electrical properties of vanadium doped Indium oxide thin films[J]. Optics Express,2008,16(1):194-199.
APA	Li H. B.,Wang N.,&Liu X. Y..(2008).Optical and electrical properties of vanadium doped Indium oxide thin films.Optics Express,16(1),194-199.
MLA	Li H. B.,et al."Optical and electrical properties of vanadium doped Indium oxide thin films".Optics Express 16.1(2008):194-199.

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