Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction

	Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction
其他题名	论文其他题名
	Guo Z.; Zhao D. X.; Liu Y. C.; Shen D. Z.; Zhang J. Y.; Li B. H.
	2008
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	93 期号:16
摘要	Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode characteristics with rectification ratio of above 1.6x10(2) at 4 V in the dark. Experiments demonstrated that the diode could be used to detect either visible or ultraviolet light by easily controlling the polarity of the voltage applied on the heterojunction. The spectral response of the device will be discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3003877].
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26478
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Guo Z.,Zhao D. X.,Liu Y. C.,et al. Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction[J]. Applied Physics Letters,2008,93(16).
APA	Guo Z.,Zhao D. X.,Liu Y. C.,Shen D. Z.,Zhang J. Y.,&Li B. H..(2008).Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction.Applied Physics Letters,93(16).
MLA	Guo Z.,et al."Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction".Applied Physics Letters 93.16(2008).

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