Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector

	Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector
其他题名	论文其他题名
	Li L. H.; Yin J. Z.; Shi B.; Wang M. S.; Du G. T.; Wang Y. D.; Jin Y. X.
	2008
发表期刊	Solid-State Electronics
ISSN	0038-1101
卷号	52 期号:1 页码:11-16
摘要	In the paper, a relationship of detectivity with material parameters is given by a theoretical calculation. An In1-xGaxAs photovoltaic detector structure with x = 0.47 is used as an example for this study. The results show that the detectivity of a photodetector can be enhanced by optimizing the carrier concentration, thickness and surface recombination velocity during the structure growth and device fabrication. (C) 2007 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26460
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li L. H.,Yin J. Z.,Shi B.,et al. Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector[J]. Solid-State Electronics,2008,52(1):11-16.
APA	Li L. H..,Yin J. Z..,Shi B..,Wang M. S..,Du G. T..,...&Jin Y. X..(2008).Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector.Solid-State Electronics,52(1),11-16.
MLA	Li L. H.,et al."Studying the effect of material parameters on detectivity in a p-n In0.53Ga0.47As photovoltaic detector".Solid-State Electronics 52.1(2008):11-16.

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