Memory effect and negative differential resistance in tris-(8-hydroxy quinoline) aluminum/bathocuproine bilayer devices

	Memory effect and negative differential resistance in tris-(8-hydroxy quinoline) aluminum/bathocuproine bilayer devices
其他题名	论文其他题名
	Su Z. S.; Fung M. K.; Lee C. S.; Li W. L.; Lee S. T.
	2008
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	93 期号:8
摘要	Memory effect and negative differential resistance (NDR) were observed in simple tris-(8-hydroxyquinoline) aluminum/bathocuproine (BCP) bilayer devices. The devices could be switched from a low conductance state to a high conductance state when a negative bias was applied and could be restored to an OFF state when a positive bias was applied beyond the NDR region. The memory effect is nonvolatile, and an ON/OFF ratio of over 10(3) was achieved. The memory effect was observed only in the presence of both Alq(3) and BCP layers, and the NDR is attributed to the defects formed in the BCP layer upon evaporation of an Al cathode. (c) 2008 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26440
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Su Z. S.,Fung M. K.,Lee C. S.,et al. Memory effect and negative differential resistance in tris-(8-hydroxy quinoline) aluminum/bathocuproine bilayer devices[J]. Applied Physics Letters,2008,93(8).
APA	Su Z. S.,Fung M. K.,Lee C. S.,Li W. L.,&Lee S. T..(2008).Memory effect and negative differential resistance in tris-(8-hydroxy quinoline) aluminum/bathocuproine bilayer devices.Applied Physics Letters,93(8).
MLA	Su Z. S.,et al."Memory effect and negative differential resistance in tris-(8-hydroxy quinoline) aluminum/bathocuproine bilayer devices".Applied Physics Letters 93.8(2008).

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