Growth of FeSe on general substrates by metal-organic chemical vapor deposition and the application in magnet tunnel junction devices

	Growth of FeSe on general substrates by metal-organic chemical vapor deposition and the application in magnet tunnel junction devices
其他题名	论文其他题名
	Wu X. J.; Zhang Z. Z.; Zhang J. Y.; Ju Z. G.; Li B. H.; Li B. S.; Shan C. X.; Zhao D. X.; Yao B.; Shen D. Z.
	2008
发表期刊	Thin Solid Films
ISSN	0040-6090
卷号	516 期号:18 页码:6116-6119
摘要	Single-phase tetragonal FeSe films were grown on c-plane sapphire, SiO(2), GaAs (100) and Si (100) substrates by low-pressure metal-organic chemical vapor deposition method. X-ray diffraction analysis shows that all the FeSe thin films on different substrates are of (001) orientation. Spin-dependent magnet tunnel junction with Fe/ZnSe/FeSe structure were fabricated, and the tunneling magnetic resistance ratio decreased with increasing the thickness of ZnSe layer in the range of 10-20 nm. (C) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26423
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wu X. J.,Zhang Z. Z.,Zhang J. Y.,et al. Growth of FeSe on general substrates by metal-organic chemical vapor deposition and the application in magnet tunnel junction devices[J]. Thin Solid Films,2008,516(18):6116-6119.
APA	Wu X. J..,Zhang Z. Z..,Zhang J. Y..,Ju Z. G..,Li B. H..,...&Shen D. Z..(2008).Growth of FeSe on general substrates by metal-organic chemical vapor deposition and the application in magnet tunnel junction devices.Thin Solid Films,516(18),6116-6119.
MLA	Wu X. J.,et al."Growth of FeSe on general substrates by metal-organic chemical vapor deposition and the application in magnet tunnel junction devices".Thin Solid Films 516.18(2008):6116-6119.

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