Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex

	Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex
其他题名	论文其他题名
	Zhang D. Y.; Li W. L.; Chu B.; Li X.; Su Z. S.; Han L. L.; Li T. L.; Chen Y. R.; Yan F.; Wu S. H.; Zhang Z. Q.; Hu Z. Z.
	2008
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	41 期号:24
摘要	We demonstrate efficient and simple structure phosphorescence organic light-emitting diodes, in which 4, 4', 4"-tris[3-methyl-pheny(phenyl)-amino]triphenyl-amine (m-MTDATA) and 4,7-diphenyl-1, 10-phenanthroline (Bphen) are used as hole transport and electron transport layers, respectively, accompanied by 3 wt% fac-tris(2-phenylpyridine) iridium doped in 1,3,5-tris(N-phenylbenzimidazol-2-yl)-benzene (Ir:TPBi) as the emitting layer. As a result, a 29 lm W(-1) peak power efficiency and 2.2V turn-on voltage are achieved, respectively. The achievement of excellent electroluminescence (EL) properties was attributed to the contribution of exciplex formation at the interface of m-MTDATA/Ir : TPBi and the Auger-type two-step process of charge carrier injection. The competition between the interfacial exciplex and Ir-complex emissions in the EL processes was also discussed.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26382
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang D. Y.,Li W. L.,Chu B.,et al. Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex[J]. Journal of Physics D-Applied Physics,2008,41(24).
APA	Zhang D. Y..,Li W. L..,Chu B..,Li X..,Su Z. S..,...&Hu Z. Z..(2008).Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex.Journal of Physics D-Applied Physics,41(24).
MLA	Zhang D. Y.,et al."Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex".Journal of Physics D-Applied Physics 41.24(2008).

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