Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex | |
其他题名 | 论文其他题名 |
Zhang D. Y.; Li W. L.; Chu B.; Li X.; Su Z. S.; Han L. L.; Li T. L.; Chen Y. R.; Yan F.; Wu S. H.; Zhang Z. Q.; Hu Z. Z. | |
2008 | |
发表期刊 | Journal of Physics D-Applied Physics
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ISSN | 0022-3727 |
卷号 | 41期号:24 |
摘要 | We demonstrate efficient and simple structure phosphorescence organic light-emitting diodes, in which 4, 4', 4"-tris[3-methyl-pheny(phenyl)-amino]triphenyl-amine (m-MTDATA) and 4,7-diphenyl-1, 10-phenanthroline (Bphen) are used as hole transport and electron transport layers, respectively, accompanied by 3 wt% fac-tris(2-phenylpyridine) iridium doped in 1,3,5-tris(N-phenylbenzimidazol-2-yl)-benzene (Ir:TPBi) as the emitting layer. As a result, a 29 lm W(-1) peak power efficiency and 2.2V turn-on voltage are achieved, respectively. The achievement of excellent electroluminescence (EL) properties was attributed to the contribution of exciplex formation at the interface of m-MTDATA/Ir : TPBi and the Auger-type two-step process of charge carrier injection. The competition between the interfacial exciplex and Ir-complex emissions in the EL processes was also discussed. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26382 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhang D. Y.,Li W. L.,Chu B.,et al. Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex[J]. Journal of Physics D-Applied Physics,2008,41(24). |
APA | Zhang D. Y..,Li W. L..,Chu B..,Li X..,Su Z. S..,...&Hu Z. Z..(2008).Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex.Journal of Physics D-Applied Physics,41(24). |
MLA | Zhang D. Y.,et al."Exciplex emission and Auger process assistant green organic electrophosphorescence devices with very low doped level of iridium complex".Journal of Physics D-Applied Physics 41.24(2008). |
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