Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire

	Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire
其他题名	论文其他题名
	Hu W. G.; Ma B.; Li D. B.; Narukawa M.; Miyake H.; Hiramatsu K.
	2009
发表期刊	Superlattices and Microstructures
ISSN	0749-6036
卷号	46 期号:6 页码:812-816
摘要	Al(0.25)Ga(0.75)N/AlN/GaN high electron mobility transistor (HEMT) structures were grown on (0 0 0 1) sapphire substrates with vicinal angles of 0.0 degrees, 0.25 degrees, 0.5 degrees and 1.0 degrees by metalorganic vapor phase epitaxy (MOVPE). Vicinal sapphire was demonstrated to enhance the step-flow growth to improve morphology, crystal and optical qualities, which eventually suppressed interface scattering and dislocation scattering to enhance the mobility of 2-dimension-electron-gas (2DEG). The optimum vicinal degree was determined to be 0.5 degrees, and the corresponding 300 K Hall mobility and sheet resistance were 1720 cm(2)/Vs and 301 Omega/sq, respectively. Furthermore, the temperature dependence of Hall measurements proved good high-temperature performance of the 0.5-off sample. (C) 2009 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26330
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Hu W. G.,Ma B.,Li D. B.,et al. Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire[J]. Superlattices and Microstructures,2009,46(6):812-816.
APA	Hu W. G.,Ma B.,Li D. B.,Narukawa M.,Miyake H.,&Hiramatsu K..(2009).Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire.Superlattices and Microstructures,46(6),812-816.
MLA	Hu W. G.,et al."Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire".Superlattices and Microstructures 46.6(2009):812-816.

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