MgNiO-based metal-semiconductor-metal ultraviolet photodetector

	MgNiO-based metal-semiconductor-metal ultraviolet photodetector
其他题名	论文其他题名
	Zhao Y. M.; Zhang J. Y.; Jiang D. Y.; Shan C. X.; Zhang Z. Z.; Yao B.; Zhao D. X.; Shen D. Z.
	2009
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	42 期号:9
摘要	In this study, we report the growth of Mg(x)Ni(1-x)O thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340 nm to 260 nm with increase in the Mg content from 0.2 to 0.8. A metal-semiconductor-metal structured photodetector is fabricated from the Mg(0.2)Ni(0.8)O film. At a bias of 5V, the dark current of the photodetector is about 70 nA. The maximum responsivity is about 147.3 mu AW(-1) at 320 nm. In addition, the ultraviolet (UV) (320 nm) to visible (400 nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that Mg(x)Ni(1-x)O is a potential candidate for application in UV photodetectors.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26301
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhao Y. M.,Zhang J. Y.,Jiang D. Y.,et al. MgNiO-based metal-semiconductor-metal ultraviolet photodetector[J]. Journal of Physics D-Applied Physics,2009,42(9).
APA	Zhao Y. M..,Zhang J. Y..,Jiang D. Y..,Shan C. X..,Zhang Z. Z..,...&Shen D. Z..(2009).MgNiO-based metal-semiconductor-metal ultraviolet photodetector.Journal of Physics D-Applied Physics,42(9).
MLA	Zhao Y. M.,et al."MgNiO-based metal-semiconductor-metal ultraviolet photodetector".Journal of Physics D-Applied Physics 42.9(2009).

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Zhao-2009-MgNiO-base（456KB）			开放获取	--	浏览下载