Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips

	Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips
其他题名	论文其他题名
	Sun X. J.; Hu L. Z.; Song H.; Li Z. M.; Li D. B.; Jiang H.; Miao G. Q.
	2009
发表期刊	Solid-State Electronics
ISSN	0038-1101
卷号	53 期号:9 页码:1032-1035
摘要	Selective wet etching of an Al0.7Ga0.3As sacrificial layer, sandwiched between two GaAs layers, at different HCl concentrations and temperatures has been investigated. This technique can be used in peeling off GaAs microtips for scanning near-field optical microscopy. The results show that the etching rate remains almost constant in a large range of etching length for the concentrated HCl etching of Al0.7Ga0.3As at a certain temperature. However, the etching rates increase very quickly for both Al0.7Ga0.3As and GaAs as the etching temperature increasing. Furthermore, the concentrated HCl at 0 degrees C is the optimal condition for selective wet etching of Al0.7Ga0.3As, at which the etching rate is about 0.5 mu m/min for Al0.7Ga0.3As, but close to 0 mu m/min for GaAs. Finally, the GaAs microtip, grown on the GaAs/Al0.7Ga0.3As/GaAs; sandwich structure, is peeled off by concentrated HCl selective etching of Al0.7Ga0.3As layer at 0 degrees C. Scanning electron microscopy image demonstrates that the GaAs microtip can be successfully removed without damage by the above-mentioned method. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26285
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun X. J.,Hu L. Z.,Song H.,et al. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips[J]. Solid-State Electronics,2009,53(9):1032-1035.
APA	Sun X. J..,Hu L. Z..,Song H..,Li Z. M..,Li D. B..,...&Miao G. Q..(2009).Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips.Solid-State Electronics,53(9),1032-1035.
MLA	Sun X. J.,et al."Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtips".Solid-State Electronics 53.9(2009):1032-1035.

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