Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

	Photoluminescence study of Si-doped a-plane GaN grown by MOVPE
其他题名	论文其他题名
	Li D. B.; Ma B.; Miyagawa R.; Hu W. G.; Narukawa M.; Miyake H.; Hiramatsu K.
	2009
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	311 期号:10 页码:2906-2909
摘要	Si-doped a-plane GaN films with different doping concentrations were grown by metal-organic vapor phase epitaxy. A mirrorlike surface without pits or anisotropic stripes was observed by optical microscopy. Detailed optical properties of the samples were characterized by temperature- and excitation-intensity-dependent PL measurements. A series of emission peaks at 3.487, 3.440, 3.375-3.350, 3.290 and 3.197 eV were observed in the low-temperature PL spectra of all samples. The origin of these emissions is discussed in detail. (C) 2009 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26284
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li D. B.,Ma B.,Miyagawa R.,et al. Photoluminescence study of Si-doped a-plane GaN grown by MOVPE[J]. Journal of Crystal Growth,2009,311(10):2906-2909.
APA	Li D. B..,Ma B..,Miyagawa R..,Hu W. G..,Narukawa M..,...&Hiramatsu K..(2009).Photoluminescence study of Si-doped a-plane GaN grown by MOVPE.Journal of Crystal Growth,311(10),2906-2909.
MLA	Li D. B.,et al."Photoluminescence study of Si-doped a-plane GaN grown by MOVPE".Journal of Crystal Growth 311.10(2009):2906-2909.

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