Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars

	Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars
其他题名	论文其他题名
	Wang Y.; Qin L.; Zhang Y.; Tian Z.; Yang Y.; Li Z. J.; Wang C.; Yao D.; Yin H. H.; Liu Y.; Wang L. J.
	2009
发表期刊	Ieee Photonics Technology Letters
ISSN	1041-1135
卷号	21 期号:14 页码:963-965
摘要	The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26264
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang Y.,Qin L.,Zhang Y.,et al. Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars[J]. Ieee Photonics Technology Letters,2009,21(14):963-965.
APA	Wang Y..,Qin L..,Zhang Y..,Tian Z..,Yang Y..,...&Wang L. J..(2009).Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars.Ieee Photonics Technology Letters,21(14),963-965.
MLA	Wang Y.,et al."Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars".Ieee Photonics Technology Letters 21.14(2009):963-965.

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