Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars | |
其他题名 | 论文其他题名 |
Wang Y.; Qin L.; Zhang Y.; Tian Z.; Yang Y.; Li Z. J.; Wang C.; Yao D.; Yin H. H.; Liu Y.; Wang L. J. | |
2009 | |
发表期刊 | Ieee Photonics Technology Letters |
ISSN | 1041-1135 |
卷号 | 21期号:14页码:963-965 |
摘要 | The strain caused by device packaging was studied in high-power semiconductor laser bars by measuring the degree of polarization. Polarization measurement with intentionally GaAsP-GaInP strained laser bar packaged on a Cu heat sink for 799-nm emission revealed the variation of band edges between the conduction band and heavy-hole or light-hole bands in the active region. This served as a method for evaluating the strain. In the packaging process, a maximum of 1800-ppm strain was transmitted to the active region. It was found that the defect density of 14.3% was induced. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26264 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang Y.,Qin L.,Zhang Y.,et al. Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars[J]. Ieee Photonics Technology Letters,2009,21(14):963-965. |
APA | Wang Y..,Qin L..,Zhang Y..,Tian Z..,Yang Y..,...&Wang L. J..(2009).Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars.Ieee Photonics Technology Letters,21(14),963-965. |
MLA | Wang Y.,et al."Packaging-Induced Strain Measurement Based on the Degree of Polarization in GaAsP-GaInP High-Power Diode Laser Bars".Ieee Photonics Technology Letters 21.14(2009):963-965. |
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