Electrical and optical properties of ZnO films grown by molecular beam epitaxy

	Electrical and optical properties of ZnO films grown by molecular beam epitaxy
其他题名	论文其他题名
	Wang S. P.; Shan C. X.; Yao B.; Li B. H.; Zhang J. Y.; Zhao D. X.; Shen D. Z.; Fan X. W.
	2009
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	255 期号:9 页码:4913-4915
摘要	Zinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired. (C) 2008 Elsevier B. V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26220
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang S. P.,Shan C. X.,Yao B.,et al. Electrical and optical properties of ZnO films grown by molecular beam epitaxy[J]. Applied Surface Science,2009,255(9):4913-4915.
APA	Wang S. P..,Shan C. X..,Yao B..,Li B. H..,Zhang J. Y..,...&Fan X. W..(2009).Electrical and optical properties of ZnO films grown by molecular beam epitaxy.Applied Surface Science,255(9),4913-4915.
MLA	Wang S. P.,et al."Electrical and optical properties of ZnO films grown by molecular beam epitaxy".Applied Surface Science 255.9(2009):4913-4915.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Wang-2009-Electrical（597KB）			开放获取	--	浏览下载