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Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates
其他题名论文其他题名
Yu S. Z.; Miao G. Q.; Jin Y. X.; Zhang L. G.; Song H.; Jiang H.; Li Z. M.; Li D. B.; Sun X. J.
2010
发表期刊Physica E-Low-Dimensional Systems & Nanostructures
ISSN1386-9477
卷号42期号:5页码:1540-1543
摘要Catalyst-free InP nanowires were grown on Si (1 0 0) substrates by metal-organic chemical vapor deposition. Morphology, crystal structure, photoluminescence, and Raman scattering properties of the nanowires were investigated. Most nanowires are long and straight; the angles between the nanowires and the Si substrate are diverse. The photoluminescence peak shows blue-shift from the band gap energy of bulk InP. Both the blue-shift of photoluminescence peak and the full width at half-maximum of photoluminescence spectrum increase with decreasing nanowires growth temperature. Due to laser-induced heating, the TO and LO phonon peaks of the nanowires reveal downshift and asymmetric broadening compared with those of bulk InP at room temperature. (C) 2009 Elsevier B.V. All rights reserved.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26178
专题中科院长春光机所知识产出
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Yu S. Z.,Miao G. Q.,Jin Y. X.,et al. Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates[J]. Physica E-Low-Dimensional Systems & Nanostructures,2010,42(5):1540-1543.
APA Yu S. Z..,Miao G. Q..,Jin Y. X..,Zhang L. G..,Song H..,...&Sun X. J..(2010).Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates.Physica E-Low-Dimensional Systems & Nanostructures,42(5),1540-1543.
MLA Yu S. Z.,et al."Growth and optical properties of catalyst-free InP nanowires on Si (100) substrates".Physica E-Low-Dimensional Systems & Nanostructures 42.5(2010):1540-1543.
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