Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method | |
其他题名 | 论文其他题名 |
Liu X.; Jiang H.; Miao G. Q.; Song H.; Cao L. Z.; Li Z. M.; Li D. B. | |
2010 | |
发表期刊 | Journal of Alloys and Compounds |
ISSN | 0925-8388 |
卷号 | 506期号:2页码:530-532 |
摘要 | InAs0.6P0.4 epilayers grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP (100) substrates were investigated. A two-step growth method, in which low-temperature (450 degrees C) InAs0.6P0.4 buffer layers were introduced into the structure, was employed to relax the mismatch between the InAs0.6P0.4 and InP substrate. The effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4 epilayer was studied by X-ray diffraction, scanning electron microscopy, Hall measurements, and photoluminescence spectrum. The characterization results showed that the growth temperature is an important factor for obtaining good quality and property of InAs0.6P0.4 epilayers and 530 degrees C is the optimum epilayer's growth temperature in our experimental conditions. (c) 2010 Elsevier B.V. All rights reserved. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26156 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Liu X.,Jiang H.,Miao G. Q.,et al. Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method[J]. Journal of Alloys and Compounds,2010,506(2):530-532. |
APA | Liu X..,Jiang H..,Miao G. Q..,Song H..,Cao L. Z..,...&Li D. B..(2010).Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method.Journal of Alloys and Compounds,506(2),530-532. |
MLA | Liu X.,et al."Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method".Journal of Alloys and Compounds 506.2(2010):530-532. |
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