A route to single-crystalline ZnO films with low residual electron concentration

	A route to single-crystalline ZnO films with low residual electron concentration
其他题名	论文其他题名
	Liu J. S.; Shan C. X.; Wang S. P.; Sun F.; Yao B.; Shen D. Z.
	2010
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	312 期号:20 页码:2861-2864
摘要	Single-crystalline ZnO films have been grown on a-plane sapphire in plasma assisted molecular beam epitaxy by introducing a high-temperature ZnO buffer layer. The residual electron concentration of the films can be lowered to 1.5 x 10(16) cm(-3), comparable with the best value ever reported for ZnO films grown on a rare and costly substrate of ScAlMgO(4). A 3 x 3 reconstruction has been observed on the films grown in this route, which reveals that the films have very smooth surface. X-ray phi-scan spectrum of the films shows six peaks with 60 intervals, and two-dimensional X-ray diffraction datum indicates the single-crystalline nature of the films. Low temperature photoluminescence spectrum of the films shows a dominant free exciton emission and five phonon replicas, confirming the high quality of the films. (C) 2010 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26143
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu J. S.,Shan C. X.,Wang S. P.,et al. A route to single-crystalline ZnO films with low residual electron concentration[J]. Journal of Crystal Growth,2010,312(20):2861-2864.
APA	Liu J. S.,Shan C. X.,Wang S. P.,Sun F.,Yao B.,&Shen D. Z..(2010).A route to single-crystalline ZnO films with low residual electron concentration.Journal of Crystal Growth,312(20),2861-2864.
MLA	Liu J. S.,et al."A route to single-crystalline ZnO films with low residual electron concentration".Journal of Crystal Growth 312.20(2010):2861-2864.

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