Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs | |
其他题名 | 论文其他题名 |
Li D. B.; Hu W. G.; Hideto M.; Kazumasa H.; Song H.![]() | |
2010 | |
发表期刊 | Chinese Physics B
![]() |
ISSN | 1674-1056 |
卷号 | 19期号:12 |
摘要 | Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26117 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Li D. B.,Hu W. G.,Hideto M.,et al. Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs[J]. Chinese Physics B,2010,19(12). |
APA | Li D. B.,Hu W. G.,Hideto M.,Kazumasa H.,&Song H..(2010).Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs.Chinese Physics B,19(12). |
MLA | Li D. B.,et al."Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs".Chinese Physics B 19.12(2010). |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Li-2010-Enhanced dee(955KB) | 开放获取 | -- | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论