Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors

	Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors
其他题名	论文其他题名
	Jiang D. Y.; Zhang X. Y.; Liu Q. S.; Bai Z. H.; Lu L. P.; Wang X. C.; Mi X. Y.; Wang N. L.; Shen D. Z.
	2010
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	256 期号:21 页码:6153-6156
摘要	We report on the fabrication and characterization of MgZnO/SiO2/n-Si structured photodetectors, for the visible-blind monitoring. The current-voltage curve of the heterojunction shows obvious rectifying behaviors. In the visible range, the photocurrent decreased rapidly. In additionally, the ultraviolet/visible rejection ratio (R340 nm/R500 nm) was about four orders of magnitude at reverse bias, indicating a high degree of visible blindness. The key role of the insulating SiO2 layer will be discussed in terms of the band diagrams of the heterojunctions. Published by Elsevier B.V.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26104
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiang D. Y.,Zhang X. Y.,Liu Q. S.,et al. Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors[J]. Applied Surface Science,2010,256(21):6153-6156.
APA	Jiang D. Y..,Zhang X. Y..,Liu Q. S..,Bai Z. H..,Lu L. P..,...&Shen D. Z..(2010).Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors.Applied Surface Science,256(21),6153-6156.
MLA	Jiang D. Y.,et al."Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors".Applied Surface Science 256.21(2010):6153-6156.

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