Acceptor related photoluminescence from ZnO : Sb nanowires fabricated by chemical vapor deposition method

	Acceptor related photoluminescence from ZnO : Sb nanowires fabricated by chemical vapor deposition method
其他题名	论文其他题名
	Zang C. H.; Zhao D. X.; Tang Y.; Guo Z.; Zhang J. Y.; Shen D. Z.; Liu Y. C.
	2008
发表期刊	Chemical Physics Letters
ISSN	0009-2614
卷号	452 期号:1—3 页码:148-151
摘要	Single-crystal Sb doped ZnO nanowires were fabricated on Si (100) substrate by a chemical vapor deposition method. The photoluminescence properties of ZnO nanowires were studied with the temperature ranging from 81 to 306 K. At 81 K, the recombination of the acceptor-bound exciton was predominant in PL spectrum, which was attributed to the transition of the (Sb-Zn-2V(Zn)) complex bound exciton. The activation of A(0)X and the acceptor binding energy had been calculated to be 16.8 and 168 meV, respectively. (c) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26006
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zang C. H.,Zhao D. X.,Tang Y.,et al. Acceptor related photoluminescence from ZnO : Sb nanowires fabricated by chemical vapor deposition method[J]. Chemical Physics Letters,2008,452(1—3):148-151.
APA	Zang C. H..,Zhao D. X..,Tang Y..,Guo Z..,Zhang J. Y..,...&Liu Y. C..(2008).Acceptor related photoluminescence from ZnO : Sb nanowires fabricated by chemical vapor deposition method.Chemical Physics Letters,452(1—3),148-151.
MLA	Zang C. H.,et al."Acceptor related photoluminescence from ZnO : Sb nanowires fabricated by chemical vapor deposition method".Chemical Physics Letters 452.1—3(2008):148-151.

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