Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition

	Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition
其他题名	论文其他题名
	Li S. W.; Jin Y. X.; Zhang B. L.; Zhou T. M.; Jiang H.; Ning Y. Q.
	1997
发表期刊	Acta Physica Sinica-Overseas Edition
ISSN	1004-423X
卷号	6 期号:6 页码:401-405
摘要	The GaInAsSb as one of the most important semiconductor alloy systems for infrared detectors is well established. Samples of GaInAsSb alloys have been grown by atmospheric pressure metalorganic chemical vapor deposition on n-GaSb (Te-doped) substrates. The properties of GaInAsSb layers were characterized by single-crystal X-ray diffraction, double-crystal X-ray rocking curve and scanning electron acoustic microscopy: The spectral responses of p(+)-GalnAsSb/pGaInAsSb/n-GaSb detectors showed cut-off wavelength at 2.4 mu m, detectivity D+ = 1.2 x 10(9) cmHz(0.5)/W at room temperature, and quantum efficiency 40 %.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1997XR19000001
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25954
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li S. W.,Jin Y. X.,Zhang B. L.,et al. Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition[J]. Acta Physica Sinica-Overseas Edition,1997,6(6):401-405.
APA	Li S. W.,Jin Y. X.,Zhang B. L.,Zhou T. M.,Jiang H.,&Ning Y. Q..(1997).Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition.Acta Physica Sinica-Overseas Edition,6(6),401-405.
MLA	Li S. W.,et al."Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition".Acta Physica Sinica-Overseas Edition 6.6(1997):401-405.

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