Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition | |
其他题名 | 论文其他题名 |
Li S. W.; Jin Y. X.; Zhang B. L.; Zhou T. M.; Jiang H.; Ning Y. Q. | |
1997 | |
发表期刊 | Acta Physica Sinica-Overseas Edition |
ISSN | 1004-423X |
卷号 | 6期号:6页码:401-405 |
摘要 | The GaInAsSb as one of the most important semiconductor alloy systems for infrared detectors is well established. Samples of GaInAsSb alloys have been grown by atmospheric pressure metalorganic chemical vapor deposition on n-GaSb (Te-doped) substrates. The properties of GaInAsSb layers were characterized by single-crystal X-ray diffraction, double-crystal X-ray rocking curve and scanning electron acoustic microscopy: The spectral responses of p(+)-GalnAsSb/pGaInAsSb/n-GaSb detectors showed cut-off wavelength at 2.4 mu m, detectivity D+ = 1.2 x 10(9) cmHz(0.5)/W at room temperature, and quantum efficiency 40 %. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:A1997XR19000001 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25954 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Li S. W.,Jin Y. X.,Zhang B. L.,et al. Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition[J]. Acta Physica Sinica-Overseas Edition,1997,6(6):401-405. |
APA | Li S. W.,Jin Y. X.,Zhang B. L.,Zhou T. M.,Jiang H.,&Ning Y. Q..(1997).Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition.Acta Physica Sinica-Overseas Edition,6(6),401-405. |
MLA | Li S. W.,et al."Uncooled GaInAsSb infrared detectors grown by metalorganic chemical vapor deposition".Acta Physica Sinica-Overseas Edition 6.6(1997):401-405. |
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