CIOMP OpenIR  > 中科院长春光机所知识产出
Growth of stoichiometric (002) ZnO thin films on Si (001) substrate by using plasma enhanced chemical vapor deposition
其他题名论文其他题名
Li B. S.; Liu Y. C.; Zhi Z. Z.; Shen D. Z.; Zhang J. Y.; Lu Y. M.; Fan X. W.; Kong X. G.
2002
发表期刊Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films
ISSN0734-2101
卷号20期号:5页码:1779-1783
摘要ZnO thin films have been grown on Si(100) substrate by plasma enhanced chemical vapor deposition using a zinc organic source [Zn(C2H5)(2)] and carbon dioxide (CO2) gas mixture at 503 K. The dependence of ZnO thin film quality on the gas flow rate ratio of Zn(C2H5)(2) to CO2 (GFRRZC) is studied by x-ray diffraction (XRD), optical absorption (OA) spectra, and photoluminescence (PL) spectra. An excitonic absorption peak is observed in the OA spectra, which closely depends on the GFRRZCs. The NRD spectra show that a c-axis-orientated wurtzite structure ZnO thin film with the full width at half maximum (FWHM) of 0.24degrees has been prepared. The PL spectra show a strong UV emission with a narrow FWHM of 105 meV at 3.289 eV with a weak deep-level defect emission around 2.5 eV, implying the formation of the stoichiometric ZnO thin films. The origin of the UV band is from the free exciton recombination testified by the temperature dependent PL spectra. (C) 2002 American Vacuum Society.
收录类别SCI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25864
专题中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Li B. S.,Liu Y. C.,Zhi Z. Z.,et al. Growth of stoichiometric (002) ZnO thin films on Si (001) substrate by using plasma enhanced chemical vapor deposition[J]. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films,2002,20(5):1779-1783.
APA Li B. S..,Liu Y. C..,Zhi Z. Z..,Shen D. Z..,Zhang J. Y..,...&Kong X. G..(2002).Growth of stoichiometric (002) ZnO thin films on Si (001) substrate by using plasma enhanced chemical vapor deposition.Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films,20(5),1779-1783.
MLA Li B. S.,et al."Growth of stoichiometric (002) ZnO thin films on Si (001) substrate by using plasma enhanced chemical vapor deposition".Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films 20.5(2002):1779-1783.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
Li-2002-Growth of st(332KB) 开放获取--浏览 请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Li B. S.]的文章
[Liu Y. C.]的文章
[Zhi Z. Z.]的文章
百度学术
百度学术中相似的文章
[Li B. S.]的文章
[Liu Y. C.]的文章
[Zhi Z. Z.]的文章
必应学术
必应学术中相似的文章
[Li B. S.]的文章
[Liu Y. C.]的文章
[Zhi Z. Z.]的文章
相关权益政策
暂无数据
收藏/分享
文件名: Li-2002-Growth of stoichiome.pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。