Temperature dependence of optical gain in InGaAs quantum dots laser

	Temperature dependence of optical gain in InGaAs quantum dots laser
其他题名	论文其他题名
	Ning Y. Q.; Liu Y.; Wang L. J.; Gao X.
	2002
发表期刊	Journal of Infrared and Millimeter Waves
ISSN	1001-9014
卷号	21 期号:4 页码:285-288
摘要	The temperature dependence of gain in InGaAs multi-stacked quantum dots (QDs) laser was investigated and compared with InGaAs single quantum well(SQW) laser. It was found that quantum dost laser showed a much better stability of gain on temperature. The gain in InGaAs QDs increases with temperature in the region from 140K to 200K. Beyond 200K the gain decreases with increasing temperature. The mechanism for the above gain characteristics was analyzed. The gain peak wavelength moves to longer wavelength range with increasing temperature and exhitits a better temperature stability compared with quantum well laser.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25851
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ning Y. Q.,Liu Y.,Wang L. J.,et al. Temperature dependence of optical gain in InGaAs quantum dots laser[J]. Journal of Infrared and Millimeter Waves,2002,21(4):285-288.
APA	Ning Y. Q.,Liu Y.,Wang L. J.,&Gao X..(2002).Temperature dependence of optical gain in InGaAs quantum dots laser.Journal of Infrared and Millimeter Waves,21(4),285-288.
MLA	Ning Y. Q.,et al."Temperature dependence of optical gain in InGaAs quantum dots laser".Journal of Infrared and Millimeter Waves 21.4(2002):285-288.

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