Changchun Institute of Optics,Fine Mechanics and Physics,CAS
980nm high power bottom emitting VCSELs | |
其他题名 | 论文其他题名 |
Jin Z. H.; Sun Y. F.; Ning Y. Q.; Yan C. L.; Qin L.; Liu Y.; Tao G. T.; Wang L. J.; Cui D. F.; Li H. Q.; Xu Z. Y. | |
2005 | |
发表期刊 | Journal of Infrared and Millimeter Waves |
ISSN | 1001-9014 |
卷号 | 24期号:1页码:61-64 |
摘要 | The structure design and fabrication process of 980 nm high power vertical-cavity surface-emitting laser diodes (VCSELs) were reported. The threshold current, output power and spectrum characteristics were investigated. An optical output power as high as 1.42W for a 400 mum diameter device was achieved at room temperature. To our knowledge, this is the highest record for a single device up to now. The dependence of the CW emitting wavelength and FWHM of spectrum of a 600mum diameter device on injection current indicated the heating effects in the active region. The output power performance was further characterized by using pulse operation with pulse width from 50 similar to 1000mus. |
收录类别 | SCI |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25751 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Jin Z. H.,Sun Y. F.,Ning Y. Q.,et al. 980nm high power bottom emitting VCSELs[J]. Journal of Infrared and Millimeter Waves,2005,24(1):61-64. |
APA | Jin Z. H..,Sun Y. F..,Ning Y. Q..,Yan C. L..,Qin L..,...&Xu Z. Y..(2005).980nm high power bottom emitting VCSELs.Journal of Infrared and Millimeter Waves,24(1),61-64. |
MLA | Jin Z. H.,et al."980nm high power bottom emitting VCSELs".Journal of Infrared and Millimeter Waves 24.1(2005):61-64. |
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