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980nm high power bottom emitting VCSELs
其他题名论文其他题名
Jin Z. H.; Sun Y. F.; Ning Y. Q.; Yan C. L.; Qin L.; Liu Y.; Tao G. T.; Wang L. J.; Cui D. F.; Li H. Q.; Xu Z. Y.
2005
发表期刊Journal of Infrared and Millimeter Waves
ISSN1001-9014
卷号24期号:1页码:61-64
摘要The structure design and fabrication process of 980 nm high power vertical-cavity surface-emitting laser diodes (VCSELs) were reported. The threshold current, output power and spectrum characteristics were investigated. An optical output power as high as 1.42W for a 400 mum diameter device was achieved at room temperature. To our knowledge, this is the highest record for a single device up to now. The dependence of the CW emitting wavelength and FWHM of spectrum of a 600mum diameter device on injection current indicated the heating effects in the active region. The output power performance was further characterized by using pulse operation with pulse width from 50 similar to 1000mus.
收录类别SCI
语种中文
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/25751
专题中科院长春光机所知识产出
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GB/T 7714
Jin Z. H.,Sun Y. F.,Ning Y. Q.,et al. 980nm high power bottom emitting VCSELs[J]. Journal of Infrared and Millimeter Waves,2005,24(1):61-64.
APA Jin Z. H..,Sun Y. F..,Ning Y. Q..,Yan C. L..,Qin L..,...&Xu Z. Y..(2005).980nm high power bottom emitting VCSELs.Journal of Infrared and Millimeter Waves,24(1),61-64.
MLA Jin Z. H.,et al."980nm high power bottom emitting VCSELs".Journal of Infrared and Millimeter Waves 24.1(2005):61-64.
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