Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates | |
其他题名 | 论文其他题名 |
Liu K. W.; Zhang J. Y.; Li B. H.; Li B. S.; Shan C. X.; Lu Y. M.; Shen D. Z. | |
2007 | |
发表期刊 | Journal of Vacuum Science & Technology A |
ISSN | 0734-2101 |
卷号 | 25期号:2页码:232-235 |
摘要 | FeSe films have been grown on GaAs (001) substrates by low-pressure metal organic vapor deposition at different temperatures. X-ray diffraction analysis indicated that the FeSe films grown at substrate temperatures (T-s) between 220 and 340 degrees C were preferentially oriented with tetragonal structure. It was not possible to deposit films at T, above 400 degrees C. The atomic molar ratios of Se/Fe increased with increasing the flow rate of H2Se/Fe(CO)(5) and the growth temperature. The electronic property results showed that the conductive type of FeSe could be adjusted by controlling the growth temperature. The coercivity of FeSe decreased with increasing the growth temperature, from 220 to 300 degrees C due to the improvement of crystal quality. (c) 2007 American Vacuum Society. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25727 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Liu K. W.,Zhang J. Y.,Li B. H.,et al. Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates[J]. Journal of Vacuum Science & Technology A,2007,25(2):232-235. |
APA | Liu K. W..,Zhang J. Y..,Li B. H..,Li B. S..,Shan C. X..,...&Shen D. Z..(2007).Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates.Journal of Vacuum Science & Technology A,25(2),232-235. |
MLA | Liu K. W.,et al."Growth and electronic and magnetic properties of alpha-FeSe films on GaAs (001) substrates".Journal of Vacuum Science & Technology A 25.2(2007):232-235. |
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