Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si

	Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si
其他题名	论文其他题名
	Liang J. C.; Jiang J. H.; Zhao J. L.; Gao Y.
	1996
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	79 期号:9 页码:7173-7176
摘要	Studies on the 0.96 and 0.84 eV photoluminescence (PL) emissions at various temperatures in GaAs epilayers grown on Si with [As]/[Ga]=20-50 by metalorganic chemical vapor deposition were made. In terms of an Arrhenius plot and configurational coordinate model, the thermal activation energy and Franck-Condon (FC) shift for the 0.96 eV emission band were obtained by measuring the variations in its PL intensity and full width at half-maximum with temperature, respectively. The dependence on PL intensity versus temperature of the 0.84 eV PL emission could not be fitted with an Arrhenius plot. Instead, it could be fitted with the formula used for amorphous semiconductors or localized states which allowed us to relate this emission with the presence of defects in the heteroepitaxial GaAs layers grown on Si investigated. Taking into account the FC and band-gap shifts, the energy relationships of the transitions from donor to acceptor, from conduction band to acceptor, and from donor to valence band were reformulated. In terms of these transition-energy relationships and experimental data, the 0.96 eV emission was explained as the recombination luminescence of the donor-acceptor pair, composed of an arsenic vacancy and a gallium vacancy, and the 0.84 eV emission as the transition from the localized As interstitial-Ga vacancy complex center to Ga vacancy. (C) 1996 American Institute of Physics.
收录类别	SCI
语种	英语
WOS记录号	WOS:A1996UJ08400075
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25423
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liang J. C.,Jiang J. H.,Zhao J. L.,et al. Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si[J]. Journal of Applied Physics,1996,79(9):7173-7176.
APA	Liang J. C.,Jiang J. H.,Zhao J. L.,&Gao Y..(1996).Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si.Journal of Applied Physics,79(9),7173-7176.
MLA	Liang J. C.,et al."Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si".Journal of Applied Physics 79.9(1996):7173-7176.

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