Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer

	Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer
其他题名	论文其他题名
	Liang C. J.; Li W. L.; Hong Z. R.; Liu X. Y.; Peng J. B.; Liu L.; Liu Z. B.; Yu J. Q.; Zhao D. X.; Lee S. T.
	1997
发表期刊	Synthetic Metals
ISSN	0379-6779
卷号	91 期号:1—3 页码:275-277
摘要	By inserting a thin Gd(AcA)(3)phen layer in the electroluminescent devices ITO/Alq/Al and ITO/TPD/Eu(DBM)(3)phen/Alq/Al, the quantum efficiency is increased in both devices and the emission color of the second device is changed, These results are supposed to be due to the carrier-blocking effect of the thin Gd(AcA)(3)phen layer which changes the distribution of electrons and holes in the devices, (C) 1997 Elsevier Science S.A.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25409
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liang C. J.,Li W. L.,Hong Z. R.,et al. Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer[J]. Synthetic Metals,1997,91(1—3):275-277.
APA	Liang C. J..,Li W. L..,Hong Z. R..,Liu X. Y..,Peng J. B..,...&Lee S. T..(1997).Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer.Synthetic Metals,91(1—3),275-277.
MLA	Liang C. J.,et al."Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer".Synthetic Metals 91.1—3(1997):275-277.

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