Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer | |
其他题名 | 论文其他题名 |
Liang C. J.; Li W. L.; Hong Z. R.; Liu X. Y.; Peng J. B.; Liu L.; Liu Z. B.; Yu J. Q.; Zhao D. X.; Lee S. T. | |
1997 | |
发表期刊 | Synthetic Metals |
ISSN | 0379-6779 |
卷号 | 91期号:1—3页码:275-277 |
摘要 | By inserting a thin Gd(AcA)(3)phen layer in the electroluminescent devices ITO/Alq/Al and ITO/TPD/Eu(DBM)(3)phen/Alq/Al, the quantum efficiency is increased in both devices and the emission color of the second device is changed, These results are supposed to be due to the carrier-blocking effect of the thin Gd(AcA)(3)phen layer which changes the distribution of electrons and holes in the devices, (C) 1997 Elsevier Science S.A. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25409 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Liang C. J.,Li W. L.,Hong Z. R.,et al. Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer[J]. Synthetic Metals,1997,91(1—3):275-277. |
APA | Liang C. J..,Li W. L..,Hong Z. R..,Liu X. Y..,Peng J. B..,...&Lee S. T..(1997).Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer.Synthetic Metals,91(1—3),275-277. |
MLA | Liang C. J.,et al."Redistribution of carriers in OEL devices by inserting a thin charge-carrier blocking layer".Synthetic Metals 91.1—3(1997):275-277. |
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