Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Preparation of CaGa2S4:Ce TFEL devices with inter-layer reaction | |
其他题名 | 论文其他题名 |
Xu C. X.; Ma L.; Cao L.; Xu Z.; Lou Z. D.; Liu X. G.; Xu X. R. | |
1997 | |
发表期刊 | Thin Solid Films |
ISSN | 0040-6090 |
卷号 | 306期号:1页码:160-162 |
摘要 | Ce3+-doped alkaline earth thiogallates with blue emission have been intensively investigated to fabricate full-color thin film electroluminescence (TEEL) devices, with sputtering, atom layer epitaxy (ALE) and molecular beam epitaxy (MBE) being the methods used. In this paper, a new way of preparing CaGa2S4:Ce TFEL devices, based on inter-layer reaction is first reported. CaS:Ce and Ga2S3 were deposited by electron beam evaporation, layer by layer, and CaGa2S4:Ce thin film was formed by post processing. The results of X-ray diffraction, scanning transmission electron microscopy (STEM) microphotographs and energy dispersive X-ray spectroscopy (EDX) show that CaGa2S4:Ce thin film with good crystallinity and stoichiometry were obtained. Photoluminescence (PL) and electroluminescence (EL) of these devices were investigated. (C) 1997 Elsevier Science S.A. |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:A1997YB66700025 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25407 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Xu C. X.,Ma L.,Cao L.,et al. Preparation of CaGa2S4:Ce TFEL devices with inter-layer reaction[J]. Thin Solid Films,1997,306(1):160-162. |
APA | Xu C. X..,Ma L..,Cao L..,Xu Z..,Lou Z. D..,...&Xu X. R..(1997).Preparation of CaGa2S4:Ce TFEL devices with inter-layer reaction.Thin Solid Films,306(1),160-162. |
MLA | Xu C. X.,et al."Preparation of CaGa2S4:Ce TFEL devices with inter-layer reaction".Thin Solid Films 306.1(1997):160-162. |
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