Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition | |
其他题名 | 论文其他题名 |
Li S. W.; Jin Y. X.; Gao C. X.; Jin Z. S. | |
1997 | |
发表期刊 | Journal of Crystal Growth |
ISSN | 0022-0248 |
卷号 | 173期号:3—4页码:321-324 |
摘要 | The quaternary Ga0.16In0.84As0.80Sb0.20 epilayer was grown on GaSb substrate by metalorganic chemical vapour deposition (MOCVD). On the epitaxial surface smooth and perfect three-dimensional islands were observed by atomic force microscopy (AFM). A good crystalline quality was characterized by single-crystal X-ray diffraction pattern and double-crystal X-ray rocking curve. When the growth rate of the growth nucleus is larger than the growth rate of the high-index facet, the mode of island growth is isotropic. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25382 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Li S. W.,Jin Y. X.,Gao C. X.,et al. Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition[J]. Journal of Crystal Growth,1997,173(3—4):321-324. |
APA | Li S. W.,Jin Y. X.,Gao C. X.,&Jin Z. S..(1997).Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition.Journal of Crystal Growth,173(3—4),321-324. |
MLA | Li S. W.,et al."Isotropic growth islands of Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapour deposition".Journal of Crystal Growth 173.3—4(1997):321-324. |
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