Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector

	Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector
其他题名	论文其他题名
	Tian Y.; Zhou T. M.; Zhang B. L.; Jin Y. X.; Ning Y. Q.; Jiang H.; Yuan G.
	1998
发表期刊	Optical Engineering
ISSN	0091-3286
卷号	37 期号:6 页码:1754-1762
摘要	A theoretical analysis of the Auger mechanism in a GalnAsSb infrared photovoltaic detector is reported. The considerations are carried out for near-room temperature and 2.5-mu m wavelength. The results show that the Auger mechanism can be suppressed by optimizing the material parameters. Thus, the performance of such detectors can be improved. (C) 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)02206-5].
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25368
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tian Y.,Zhou T. M.,Zhang B. L.,et al. Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector[J]. Optical Engineering,1998,37(6):1754-1762.
APA	Tian Y..,Zhou T. M..,Zhang B. L..,Jin Y. X..,Ning Y. Q..,...&Yuan G..(1998).Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector.Optical Engineering,37(6),1754-1762.
MLA	Tian Y.,et al."Theoretical analysis of the Auger mechanism in a GaInAsSb infrared photovoltaic detector".Optical Engineering 37.6(1998):1754-1762.