Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

	Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
其他题名	论文其他题名
	Ning Y. Q.; Zhou T. M.; Zhang B. L.; Jiang H.; Li S. W.; Yuan G. A.; Tian Y. A.; Jin Y. X.
	1998
发表期刊	Journal of Materials Science-Materials in Electronics
ISSN	0957-4522
卷号	9 期号:2 页码:121-125
摘要	MOCVD growth and characterization of GaSb-rich and InAs-rich GaInAsSb on GaSb substrates was investigated. The surface of InAs-rich GaInAsSb epilayers showed morphological features very different from those on GaSb-rich films. Solid compositions of Ga1-xInxAsySb1-y films were dependent on growth temperature and the input source ratios, such as Ga/III ratio and Sb/V ratio. Unintentionally doped InAs-rich GaInAsSb showed n-type conduction, and GaSb-rich samples were p-type. A room temperature electron mobility of 5000 cm(2) v(-1) s(-1) with electron concentration of 3.6 x 10(17) cm(-3) for InAs-rich films was obtained. On the other hand, a hole mobility of 360 cm(2) v(-1) s(-1) with a hole concentration of 1 x 10(17) cm(-3) for GaSb-rich samples was achieved. (C) 1998 Chapman & Hall.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25355
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ning Y. Q.,Zhou T. M.,Zhang B. L.,et al. Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD[J]. Journal of Materials Science-Materials in Electronics,1998,9(2):121-125.
APA	Ning Y. Q..,Zhou T. M..,Zhang B. L..,Jiang H..,Li S. W..,...&Jin Y. X..(1998).Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD.Journal of Materials Science-Materials in Electronics,9(2),121-125.
MLA	Ning Y. Q.,et al."Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD".Journal of Materials Science-Materials in Electronics 9.2(1998):121-125.

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