Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition | |
其他题名 | 论文其他题名 |
Gao C. X.; Li S. W.; Yang J.; Liu B. B. | |
1998 | |
发表期刊 | Chinese Physics Letters
![]() |
ISSN | 0256-307X |
卷号 | 15期号:10页码:724-726 |
摘要 | The atomic force microscopy study was made on the quaternary Ga0.16In0.84As0.80Sb0.20 epilayer prepared on GaSb substrate by metalorganic chemical vapor deposition. The island-like defects were found on the substrate surface pretreated chemically. With the growth process going, these island-like defects could be buried by the epilayer. In the initial stage, two-dimensional-growth-mode was followed. When the epilayer thickness reached 70 nm, three-dimensional (3D)-growth-mode occurred and thc perfect 3D islands were observed. |
收录类别 | SCI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25343 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Gao C. X.,Li S. W.,Yang J.,et al. Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition[J]. Chinese Physics Letters,1998,15(10):724-726. |
APA | Gao C. X.,Li S. W.,Yang J.,&Liu B. B..(1998).Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition.Chinese Physics Letters,15(10),724-726. |
MLA | Gao C. X.,et al."Atomic force microscopy on the Ga0.16In0.84As0.80Sb0.20 epilayer grown by metalorganic chemical vapor deposition".Chinese Physics Letters 15.10(1998):724-726. |
条目包含的文件 | 下载所有文件 | |||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Gao-1998-Atomic forc(393KB) | 开放获取 | -- | 浏览 下载 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论