Effect of material parameters on the quantum efficiency of GaInAsSb detectors

	Effect of material parameters on the quantum efficiency of GaInAsSb detectors
其他题名	论文其他题名
	Tian Y.; Zhou T. M.; Zhang B. L.; Jiang H.; Jin Y. X.
	1999
发表期刊	Solid-State Electronics
ISSN	0038-1101
卷号	43 期号:3 页码:625-631
摘要	In this paper, a theoretical study of the effect of material parameters on the quantum efficiency of a homogeneous GaInAsSb infrared photovolatic detector is presented. The considerations are carried out for the near room temperature and 2.5 mu m wavelength. The calculated results show that the quantum efficiency depends strongly on the carrier concentrations in the n- and p-regions. In addition, the absorption coefficient, the surface recombination velocities and the widths of the two regions also effect the quantum efficiency. (C) 1999 Elsevier Science Ltd. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25316
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Tian Y.,Zhou T. M.,Zhang B. L.,et al. Effect of material parameters on the quantum efficiency of GaInAsSb detectors[J]. Solid-State Electronics,1999,43(3):625-631.
APA	Tian Y.,Zhou T. M.,Zhang B. L.,Jiang H.,&Jin Y. X..(1999).Effect of material parameters on the quantum efficiency of GaInAsSb detectors.Solid-State Electronics,43(3),625-631.
MLA	Tian Y.,et al."Effect of material parameters on the quantum efficiency of GaInAsSb detectors".Solid-State Electronics 43.3(1999):625-631.

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